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Broadband RF and microwave amplifiers / Andrei Grebennikov, Narendra Kumar, Binboga S. Yarman.

By: Grebennikov, Andrei, 1956- [author.].
Contributor(s): Kumar, Narendra, 1976- [author.] | Yarman, Binboga Siddik [author.].
Boca Raton, Florida, USA : CRC Press, ©2016Description: xxiv, 743 pages : illustrations ; 26 cm.Content type: text ISBN: 1466557389; 9781466557383.Subject(s): Microwave amplifiers -- Design and constructionDDC classification: 621.38412/G79
Contents:
1. Two-port network parameters -- 2. Power amplifier design principles -- 3. Lossless matched broadband power amplifiers -- 4. Lossy matched and feedback broadband power amplifiers -- 5. Design of wideband RF and microwave amplifiers employing real frequency techniques -- 6. High-efficiency broadband class-E power amplifiers -- 7. Broadband and multiband Doherty amplifiers -- 8. Low-noise broadband amplifiers -- 9. Distributed amplifiers -- 10. CMOS amplifiers for UWB applications.
Summary: Broadband RF and Microwave Amplifiers provides extensive coverage of broadband radio frequency (RF) and microwave power amplifier design, including well-known historical and recent novel schematic configurations, theoretical approaches, circuit simulation results, and practical implementation strategies. The text begins by introducing two-port networks to illustrate the behavior of linear and nonlinear circuits, explaining the basic principles of power amplifier design, and discussing impedance matching and broadband power amplifier design using lumped and distributed parameters. The book then: Shows how dissipative or lossy gain-compensation-matching circuits can offer an important trade-off between power gain, reflection coefficient, and operating frequency bandwidth Describes the design of broadband RF and microwave amplifiers using real frequency techniques (RFTs), supplying numerous examples based on the MATLAB® programming process Examines Class-E power amplifiers, Doherty amplifiers, low-noise amplifiers, microwave gallium arsenide field-effect transistor (GaAs FET)-distributed amplifiers, and complementary metal-oxide semiconductor (CMOS) amplifiers for ultra-wideband (UWB) applications Broadband RF and Microwave Amplifiers combines theoretical analysis with practical design to create a solid foundation for innovative ideas and circuit design techniques.
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GC COECS 621.38412/G79 (Browse shelf) Available 82264

College of Engineering and Computer Studies

Includes bibliographical references and index.

1. Two-port network parameters -- 2. Power amplifier design principles -- 3. Lossless matched broadband power amplifiers -- 4. Lossy matched and feedback broadband power amplifiers -- 5. Design of wideband RF and microwave amplifiers employing real frequency techniques -- 6. High-efficiency broadband class-E power amplifiers -- 7. Broadband and multiband Doherty amplifiers -- 8. Low-noise broadband amplifiers -- 9. Distributed amplifiers -- 10. CMOS amplifiers for UWB applications.

Broadband RF and Microwave Amplifiers provides extensive coverage of broadband radio frequency (RF) and microwave power amplifier design, including well-known historical and recent novel schematic configurations, theoretical approaches, circuit simulation results, and practical implementation strategies. The text begins by introducing two-port networks to illustrate the behavior of linear and nonlinear circuits, explaining the basic principles of power amplifier design, and discussing impedance matching and broadband power amplifier design using lumped and distributed parameters. The book then: Shows how dissipative or lossy gain-compensation-matching circuits can offer an important trade-off between power gain, reflection coefficient, and operating frequency bandwidth Describes the design of broadband RF and microwave amplifiers using real frequency techniques (RFTs), supplying numerous examples based on the MATLAB® programming process Examines Class-E power amplifiers, Doherty amplifiers, low-noise amplifiers, microwave gallium arsenide field-effect transistor (GaAs FET)-distributed amplifiers, and complementary metal-oxide semiconductor (CMOS) amplifiers for ultra-wideband (UWB) applications Broadband RF and Microwave Amplifiers combines theoretical analysis with practical design to create a solid foundation for innovative ideas and circuit design techniques.

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