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Fundamentals of semiconductor devices / Betty Lise Anderson, The Ohio State University, Richard L. Anderson.

By: Contributor(s): New York, NY, USA : McGraw-Hill Education, ©2018Edition: Second editionDescription: xiv, 816 pages : 24 cm. illustrationsContent type:
  • text.
ISBN:
  • 9781259251351 (pbk)
Subject(s): DDC classification:
  • 23 621.38152/An23
LOC classification:
  • TK7871.85 A495 2018
Other classification:
  • COECS/E
Contents:
Part 1 - Materials1) Electron Energy and States in Semiconductors2) Homogeneous Semiconductors3) Current Flow in Homogeneous Semiconductors4) Nonhomogeneous SemiconductorsSupplement to Part 1Supplement 1ASupplement 1B Part 2 - Diodes5) Prototype pn Homojunctions6) Additional Considerations for DiodesSupplement to Part 2Part 3 - Field-Effect Transistors7) The MOSFET8) Additional Considerations for FETsSupplement to Part 3Part 4 - Bipolar Junction Transistors9) Bipolar Junction Devices: Statics10) Time-Dependent Analysis of BJTsSupplement to Part 4Part 5 - Optoelectronic Devices11) Optoelectronic DevicesAppendix A - ConstantsAppendix B - List of SymbolsAppendix C - FabricationAppendix D - Density-of-States Function, Density-of-States Effective Mass, Conductivity Effective MassAppendix E - Some Useful IntegralsAppendix F - Useful EquationsAppendix G - List of Suggested Readings
Summary: Provides a realistic and practical treatment of modern semiconductor devices. In this book, an understanding of the physical processes responsible for the electronic properties of semiconductor materials and devices is emphasized. It helps the reader appreciate the underlying physics behind the equations derived and their range of applicability.
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Includes index.

Part 1 - Materials1) Electron Energy and States in Semiconductors2) Homogeneous Semiconductors3) Current Flow in Homogeneous Semiconductors4) Nonhomogeneous SemiconductorsSupplement to Part 1Supplement 1ASupplement 1B Part 2 - Diodes5) Prototype pn Homojunctions6) Additional Considerations for DiodesSupplement to Part 2Part 3 - Field-Effect Transistors7) The MOSFET8) Additional Considerations for FETsSupplement to Part 3Part 4 - Bipolar Junction Transistors9) Bipolar Junction Devices: Statics10) Time-Dependent Analysis of BJTsSupplement to Part 4Part 5 - Optoelectronic Devices11) Optoelectronic DevicesAppendix A - ConstantsAppendix B - List of SymbolsAppendix C - FabricationAppendix D - Density-of-States Function, Density-of-States Effective Mass, Conductivity Effective MassAppendix E - Some Useful IntegralsAppendix F - Useful EquationsAppendix G - List of Suggested Readings

Provides a realistic and practical treatment of modern semiconductor devices. In this book, an understanding of the physical processes responsible for the electronic properties of semiconductor materials and devices is emphasized. It helps the reader appreciate the underlying physics behind the equations derived and their range of applicability.

In English.

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