| 000 | 02682cam a2200397 i 4500 | ||
|---|---|---|---|
| 001 | 19233264 | ||
| 003 | OSt | ||
| 005 | 20190707233428.0 | ||
| 007 | ta | ||
| 008 | 160817s2018 nyu 001 0 eng | ||
| 010 | _a 2016036979 | ||
| 020 | _a9781259251351 (pbk) | ||
| 040 |
_aDLC _beng _cLearning Resource Center _erda _dHoly Name University. |
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| 042 | _apcc | ||
| 050 | 0 | 0 |
_aTK7871.85 _bA495 2018 |
| 082 | 0 | 0 |
_223 _a621.38152/An23 |
| 084 | _aCOECS/E | ||
| 085 | 0 | 0 |
_aCOECS/E 621.38152/An23 _223 |
| 100 | 1 |
_aAnderson, Betty Lise, _eauthor. _915119 |
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| 245 | 1 | 0 |
_aFundamentals of semiconductor devices / _cBetty Lise Anderson, The Ohio State University, Richard L. Anderson. |
| 250 | _aSecond edition. | ||
| 264 |
_aNew York, NY, USA : _bMcGraw-Hill Education, _c©2018. |
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| 300 |
_axiv, 816 pages : _c24 cm. _billustrations ; |
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| 336 |
_atext. _btext. |
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| 500 | _aIncludes index. | ||
| 505 | _aPart 1 - Materials1) Electron Energy and States in Semiconductors2) Homogeneous Semiconductors3) Current Flow in Homogeneous Semiconductors4) Nonhomogeneous SemiconductorsSupplement to Part 1Supplement 1ASupplement 1B Part 2 - Diodes5) Prototype pn Homojunctions6) Additional Considerations for DiodesSupplement to Part 2Part 3 - Field-Effect Transistors7) The MOSFET8) Additional Considerations for FETsSupplement to Part 3Part 4 - Bipolar Junction Transistors9) Bipolar Junction Devices: Statics10) Time-Dependent Analysis of BJTsSupplement to Part 4Part 5 - Optoelectronic Devices11) Optoelectronic DevicesAppendix A - ConstantsAppendix B - List of SymbolsAppendix C - FabricationAppendix D - Density-of-States Function, Density-of-States Effective Mass, Conductivity Effective MassAppendix E - Some Useful IntegralsAppendix F - Useful EquationsAppendix G - List of Suggested Readings | ||
| 520 | _aProvides a realistic and practical treatment of modern semiconductor devices. In this book, an understanding of the physical processes responsible for the electronic properties of semiconductor materials and devices is emphasized. It helps the reader appreciate the underlying physics behind the equations derived and their range of applicability. | ||
| 546 | _aIn English. | ||
| 650 | 0 |
_aSemiconductors. _915120 |
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| 650 | 0 |
_aTransistors. _915121 |
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| 700 | 1 |
_aAnderson, Richard L., _eauthor. _915122 |
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| 906 |
_a7 _bcbc _corignew _d1 _eecip _f20 _gy-gencatlg |
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| 942 |
_2ddc _cBK |
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| 999 |
_c30601 _d30601 |
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