TY  - BOOK
AU  - Fossum,Jerry G.
TI  - Fundamentals of ultra-thin-body MOSFETs and FinFETs
SN  - 9781139343466 (ebook)
AV  - TK7871.99.M44 F67 2013
U1  - 621.3815/284 23
PY  - 2013///
CY  - Cambridge
PB  - Cambridge University Press
KW  - Metal oxide semiconductor field-effect transistors
KW  - Integrated circuits
KW  - Very large scale integration
N1  - Title from publisher's bibliographic system (viewed on 05 Oct 2015); Machine generated contents note: Preface; List of physical constants; List of symbols; 1. Introduction; 2. Unique features of UTB MOSFETs; 3. Planar fully depleted SOI MOSFETs; 4. FinFETs; Appendix: UFDG; References; Index
N2  - Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors.   • Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM • Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time • Projects potential nanoscale UTB CMOS performances • Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource
UR  - https://doi.org/10.1017/CBO9781139343466
ER  -